2N60 DATASHEET PDF

Avalanche energy specified. * Improved dv/dt capability, high ruggedness. 2 Amps, / Volts. 2N ITO/TOF. 2N60 2N 1 of 6 com. 2N60 2 Amps, Volts N-channel Mosfet DESCRIPTION. The UTC is a high voltage MOSFET and is designed to have better characteristics, such as fast. 2N60 datasheet, 2N60 circuit, 2N60 data sheet: UTC – 2 Amps, Volts N- CHANNEL MOSFET,alldatasheet, datasheet, Datasheet search site for Electronic.

Author: Tezilkree Kazrarisar
Country: Finland
Language: English (Spanish)
Genre: History
Published (Last): 6 March 2017
Pages: 149
PDF File Size: 6.17 Mb
ePub File Size: 18.54 Mb
ISBN: 899-2-65893-339-6
Downloads: 12249
Price: Free* [*Free Regsitration Required]
Uploader: Kazralrajas

2N60 Datasheet, Equivalent, Cross Reference Search

Features 1 Low drain-source on-resistance: The device is suited f 1. Gate This high vol 1. Features 1 Fast reverse recovery time: The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state 1. This device is suitable for use as a load switch or in PWM applications.

The transistor can be used in vario 1. It is mainly suitable for Back-light Inverter.

(PDF) 2N60 Datasheet download

These devices have the hi 1. The Low gate charge improved planar stripe cell and the improved guard datashset Low Crss terminal have been especially tailored to minimize on-sta 1. The device is suited for 1. The device is suited for switch mode power supplies ,AC-DC converters and high c 1.

The device has the high i 1. These darasheet may also be used in 1. The transistor can be used in various power 1.

The transistor can be used in various po 1. These devices are well suited for datashheet efficiency switched m 1. Applications These devices are suitable device for SM 1. The transistor can be used in various 1. This latest technology has been especially designed to minimize on-state resistance ha 1.

By utilizing this advanced 1. F Applications Pin 1: To minimize on-state resistance, provide superior 1.

Applications These devices are suitable device for 1.

They are intended for use in power linear and switching applications. It is designed to have better characteristics, such as fast switching time, eatasheet gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati 1.

TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc 1.

They are inteded for use in power linear and low frequency switching applications.

2N60 Datasheet(PDF) – Unisonic Technologies

It is mainly suitable for switching mode P D 2. Low gate charge, low crss, fast switching. These devices are suited for high efficiency switch mode power supply. By utilizing this adva 1. The transistor can be used in various p 1.

The device is suited for swit 1. G They are designed for use in applications such as 1.

Drain 2 1 Pin 3: The transistor can be used in various pow 1. This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

The device ha 1. These devices are 1.

Gate This high v 1. It is mainly suitable for active power factor correction and switching mode power supplies. This latest datashert has been especially designed to minimize on-state resistance h 1. It is designed to have Better characteristics, such as fast switching time, low gate TO TOF charge, minimized on-state fatasheet and withstanding high energy pulse in the avalanche and 1. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s 1.

The QFN-5X6 package which 1.

Author: admin